SQS481ENW-T1_GE3

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 250µA
• Package / Case:PowerPAK® 1212-8
• Supplier Device Package:PowerPAK® 1212-8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):62.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:385pF @ 75V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V

• Series:Automotive, AEC-Q101, TrenchFET®
• Rds On (Max) @ Id, Vgs:1.095 Ohm @ 5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
• Drain to Source Voltage (Vdss):150V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)