SQS966ENW-T1_GE3

Technical Details

• Series:Automotive, AEC-Q101, TrenchFET®
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Rds On (Max) @ Id, Vgs:36 mOhm @ 1.25A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:572pF @ 25V
• Power - Max:27.8W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® 1212-8W
• Supplier Device Package:PowerPAK® 1212-8W