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STB4NK60Z-1

STMicroelectronics
STB4NK60Z-1 HongDa Electronics STB4NK60Z-1
  • Manufacturer Part# STB4NK60Z-1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 4A I2PAK
  • More DetailN-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK
In Stock: 921

Can ship immediately

Datasheet:
STB4NK60Z-1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 50µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:I2PAK
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):70W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:510pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V

 

  • Series:SuperMESH™
  • Rds On (Max) @ Id, Vgs:2 Ohm @ 2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tube 

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