STB5NK52ZD-1

Technical Details

• Vgs(th) (Max) @ Id:4.5V @ 50µA
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package:I2PAK
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):70W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:529pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:16.9nC @ 10V

• Series:SuperMESH™
• Rds On (Max) @ Id, Vgs:1.5 Ohm @ 2.2A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
• Drain to Source Voltage (Vdss):520V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube