STB95N3LLH6 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Mounting Type:Surface Mount
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):70W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2200pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:24.5nC @ 4.5V

• Series:DeepGATE™, STripFET™ VI
• Rds On (Max) @ Id, Vgs:4.2 mOhm @ 40A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)