Can ship immediately
1. Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
2. Features
1. Very low on-resistance
2. Very low gate charge
3. High avalanche ruggedness
4. Low gate drive power loss
3. Applications
Switching applications
4. Internal schematic diagram
