STE110NS20FD

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:ISOTOP
• Supplier Device Package:ISOTOP®
• Mounting Type:Chassis Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):500W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:7900pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:504nC @ 10V

• Series:MESH OVERLAY™
• Rds On (Max) @ Id, Vgs:24 mOhm @ 50A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:110A (Tc)
• Drain to Source Voltage (Vdss):200V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube