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1. Description
This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
2. Features
1. Outstanding dv/dt capability
2. Gate charge minimized
3. Very low intrinsic capacitances
4. Very low RDS(on)
5. Extremely low trr
3. Applications
1. Switching applications
4. Configuration introduction
