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STFI11NM65N

STMicroelectronics
STFI11NM65N HongDa Electronics STFI11NM65N
  • Manufacturer Part# STFI11NM65N
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N CH 650V 11A I2PAKFP
  • More DetailN-Channel 650V 11A (Tc) 25W (Tc) Through Hole I2PA...
In Stock: 1000

Can ship immediately

Datasheet:
STFI11NM65N Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-262-3 Full Pack, I²Pak
  • Supplier Device Package:I2PAKFP (TO-281)
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):25W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:800pF @ 50V
  • Vgs (Max):±25V
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V

 

  • Series:MDmesh™ II
  • Rds On (Max) @ Id, Vgs:455 mOhm @ 5.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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