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STFU9N65M2

STMicroelectronics
STFU9N65M2 HongDa Electronics STFU9N65M2
  • Manufacturer Part# STFU9N65M2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET
  • More DetailN-Channel 650V 5A (Tc) 20W (Tc) Through Hole TO-22...
In Stock: 1000

Can ship immediately

Datasheet:
STFU9N65M2 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FP
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):20W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:315pF @ 100V
  • Vgs (Max):±25V
  • Series:MDmesh™ M2

 

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Rds On (Max) @ Id, Vgs:900 mOhm @ 2.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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