• Manufacturer Part# STI11NM80
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 800V 11A I2PAK-3
  • More DetailN-Channel 800V 11A (Tc) 150W (Tc) Through Hole I2P...
In Stock: 1000

Can ship immediately

Datasheet:

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:I2PAK (TO-262)
  • Mounting Type:Through Hole
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Power Dissipation (Max):150W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1630pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:43.6nC @ 10V

 

  • Series:MDmesh™
  • Rds On (Max) @ Id, Vgs:400 mOhm @ 5.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drain to Source Voltage (Vdss):800V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tube 

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