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STI28N60M2

STMicroelectronics
STI28N60M2 HongDa Electronics STI28N60M2
  • Manufacturer Part# STI28N60M2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 22A I2PAK
  • More DetailN-Channel 600V 22A (Tc) 170W (Tc) Through Hole I2P...
In Stock: 1000

Can ship immediately

Datasheet:
STI28N60M2 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:I2PAK (TO-262)
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):170W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1440pF @ 100V
  • Vgs (Max):±25V
  • Series:MDmesh™ M2

 

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Rds On (Max) @ Id, Vgs:150 mOhm @ 11A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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