STL57N65M5 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:5V @ 250µA
• Package / Case:8-PowerVDFN
• Supplier Device Package:PowerFlat™ (8x8) HV
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.8W (Ta), 189W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:4200pF @ 100V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V

• Series:MDmesh™ V
• Rds On (Max) @ Id, Vgs:69 mOhm @ 20A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:4.3A (Ta), 22.5A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)