STL6N3LLH6

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA (Min)
• Package / Case:6-PowerWDFN
• Supplier Device Package:PowerFlat™ (2x2)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.4W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:283pF @ 24V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:3.6nC @ 4.5V

• Series:DeepGATE™, STripFET™ VI
• Rds On (Max) @ Id, Vgs:25 mOhm @ 3A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:--
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)