STLD200N4F6AG Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1mA
• Package / Case:8-PowerWDFN
• Supplier Device Package:PowerFlat™ (5x6) Dual Side
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):158W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:10700pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:172nC @ 10V

• Series:Automotive, AEC-Q101, STripFET™ F6
• Rds On (Max) @ Id, Vgs:1.5 mOhm @ 75A, 10V
• Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)