STN3NF06L Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.8V @ 250µA
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):3.3W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:340pF @ 25V
• Vgs (Max):±16V
• Gate Charge (Qg) (Max) @ Vgs:9nC @ 5V

• Series:STripFET™ II
• Rds On (Max) @ Id, Vgs:100 mOhm @ 1.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)