STS8N6LF6AG Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):3.2W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1340pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V

• Series:Automotive, AEC-Q101, STripFET™ F6
• Rds On (Max) @ Id, Vgs:24 mOhm @ 4A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:8A (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)