STT5N2VH5 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
• Package / Case:SOT-23-6
• Supplier Device Package:SOT-23-6
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.6W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:367pF @ 16V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 4.5V

• Series:STripFET™ V
• Rds On (Max) @ Id, Vgs:30 mOhm @ 2A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:--
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)