STU9HN65M2

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package:I-PAK
• Mounting Type:Through Hole
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):60W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:325pF @ 100V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:11.5nC @ 10V

• Series:MDmesh™ M2
• Rds On (Max) @ Id, Vgs:820 mOhm @ 2.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube