STV160NF02LAT4

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:PowerSO-10 Exposed Bottom Pad
• Supplier Device Package:10-PowerSO
• Mounting Type:Surface Mount
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):210W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:5500pF @ 15V
• Vgs (Max):±15V
• Gate Charge (Qg) (Max) @ Vgs:175nC @ 10V

• Series:STripFET™
• Rds On (Max) @ Id, Vgs:2.7 mOhm @ 80A, 10V
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Current - Continuous Drain (Id) @ 25°C:160A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)