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1. Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers
2. Features
1. 100% avalanche tested
2. Intrinsic capacitances and Qg minimized
3. High speed switching
4. Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
3. Package information
