STY105NM50N

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-247-3
• Supplier Device Package:MAX247™
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):625W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:9600pF @ 100V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:326nC @ 10V

• Series:MDmesh™ II
• Rds On (Max) @ Id, Vgs:22 mOhm @ 52A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:110A (Tc)
• Drain to Source Voltage (Vdss):500V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube