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SUD50N03-09P-GE3

Vishay Siliconix
SUD50N03-09P-GE3 HongDa Electronics SUD50N03-09P-GE3
  • Manufacturer Part# SUD50N03-09P-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 63A TO252
  • More DetailN-Channel 30V 63A (Tc) 7.5W (Ta), 65.2W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
SUD50N03-09P-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252, (D-Pak)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):7.5W (Ta), 65.2W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2200pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:9.5 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:63A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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