SUP45P03-09-GE3

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:90nC @ 10V
• Package / Case:TO-220-3
• Supplier Device Package:TO-220AB
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):73.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 15V
• Vgs (Max):±20V
• Series:--

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Rds On (Max) @ Id, Vgs:8.7 mOhm @ 20A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:45A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete