SVD5865NLT4G Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2V @ 250µA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):3.1W (Ta), 71W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:16 mOhm @ 19A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:10A (Ta), 46A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)