TK16V60W,LVQ Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3.7V @ 790µA
• Package / Case:4-VSFN Exposed Pad
• Supplier Device Package:4-DFN-EP (8x8)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):139W (Tc)
• FET Feature:Super Junction
• Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 300V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

• Series:DTMOSIV
• Rds On (Max) @ Id, Vgs:190 mOhm @ 7.9A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:15.8A (Ta)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)