TK17E65W,S1X

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 900µA
• Package / Case:TO-220-3
• Supplier Device Package:TO-220
• Mounting Type:Through Hole
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):165W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 300V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V

• Series:DTMOSIV
• Rds On (Max) @ Id, Vgs:200 mOhm @ 8.7A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:17.3A (Ta)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube