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TK22E10N1,S1X

Toshiba Semiconductor and Storage
TK22E10N1,S1X HongDa Electronics TK22E10N1,S1X
  • Manufacturer Part# TK22E10N1,S1X
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N CH 100V 52A TO220
  • More DetailN-Channel 100V 52A (Tc) 72W (Tc) Through Hole TO-2...
In Stock: 300

Can ship immediately

Datasheet:
TK22E10N1,S1X Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 300µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):72W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V

 

  • Series:U-MOSVIII-H
  • Rds On (Max) @ Id, Vgs:13.8 mOhm @ 11A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:52A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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