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TK3A65DA(STA4,QM)

Toshiba Semiconductor and Storage
TK3A65DA(STA4,QM) HongDa Electronics TK3A65DA(STA4,QM)
  • Manufacturer Part# TK3A65DA(STA4,QM)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 2.5A TO-220SIS
  • More DetailN-Channel 650V 2.5A (Ta) 35W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
TK3A65DA(STA4,QM) Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.4V @ 1mA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220SIS
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):35W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:490pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V

 

  • Series:π-MOSVII
  • Rds On (Max) @ Id, Vgs:2.51 Ohm @ 1.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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