TK55D10J1(Q)

Technical Details

• Vgs(th) (Max) @ Id:2.3V @ 1mA
• Package / Case:TO-220-3
• Supplier Device Package:TO-220(W)
• Mounting Type:Through Hole
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):140W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:5700pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:10.5 mOhm @ 27A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:55A (Ta)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube