TK5A55D(STA4,Q,M)

Technical Details

• Vgs(th) (Max) @ Id:4.4V @ 1mA
• Package / Case:TO-220-3 Full Pack
• Supplier Device Package:TO-220SIS
• Mounting Type:Through Hole
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):35W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:540pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V

• Series:π-MOSVII
• Rds On (Max) @ Id, Vgs:1.7 Ohm @ 2.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drain to Source Voltage (Vdss):550V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube