TN0200K-T1-E3 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 50µA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3 (TO-236)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):350mW (Ta)
• FET Feature:--
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:2nC @ 4.5V
• Series:TrenchFET®

• Rds On (Max) @ Id, Vgs:400 mOhm @ 600mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:--
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Cut Tape (CT)