TP0610KL-TR1-E3 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3V @ 250µA
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package:TO-226AA
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):800mW (Ta)
• FET Feature:--
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:3nC @ 15V
• Series:TrenchFET®

• Rds On (Max) @ Id, Vgs:6 Ohm @ 500mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)