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TP65H050WS

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TP65H050WS HongDa Electronics TP65H050WS
  • Manufacturer Part# TP65H050WS
  • Product CategoryDiscrete Semiconductor Products
  • Short Description650 V 34 A CASCODE GAN FET
  • More DetailN-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-...
In Stock: 265

Can ship immediately

Datasheet:
TP65H050WS Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):119W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 400V
  • Vgs (Max):±20V
  • Series:--

 

  • Vgs(th) (Max) @ Id:4.8V @ 700µA
  • Rds On (Max) @ Id, Vgs:60 mOhm @ 22A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:34A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:GaNFET (Gallium Nitride)
  • FET Type:N-Channel
  • Part Status:Active

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