TPD3215M

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Last Time Buy
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):600V
• Current - Continuous Drain (Id) @ 25°C:70A (Tc)
• Rds On (Max) @ Id, Vgs:34 mOhm @ 30A, 8V
• Vgs(th) (Max) @ Id:--

• Gate Charge (Qg) (Max) @ Vgs:28nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 100V
• Power - Max:470W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:Module
• Supplier Device Package:Module