TPH2900ENH,L1Q

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1mA
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-SOP Advance (5x5)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):78W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2200pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V

• Series:U-MOSVIII-H
• Rds On (Max) @ Id, Vgs:29 mOhm @ 16.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:33A (Ta)
• Drain to Source Voltage (Vdss):200V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)