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TPN6R303NC,LQ

Toshiba Semiconductor and Storage
TPN6R303NC,LQ HongDa Electronics TPN6R303NC,LQ
  • Manufacturer Part# TPN6R303NC,LQ
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N CH 30V 20A 8TSON-ADV
  • More DetailN-Channel 30V 20A (Ta) 700mW (Ta), 19W (Tc) Surfac...
In Stock: 1000

Can ship immediately

Datasheet:
TPN6R303NC,LQ Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.3V @ 200µA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:8-TSON Advance (3.3x3.3)
  • Mounting Type:Surface Mount
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):700mW (Ta), 19W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1370pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V

 

  • Series:U-MOSVIII
  • Rds On (Max) @ Id, Vgs:6.3 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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