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1. Describe
The TPS25221 is suitable for applications where heavy capacitive loads and short circuits may be encountered. The programmable current-limit threshold can be set between 275 mA and 2.7 A (typ) using an external resistor. At higher current limit settings, ILIMIT accuracy can reach ±6%. Controls power switch rise and fall times to minimize current surges during turn-on and close. When the load attempts to draw more current than the programmed ILIMIT, the internal FET goes into constant current mode to keep ILOAD at or below ILIMIT. The FAULT output will be asserted low during an overcurrent condition after the built-in deglitch time.
2. Feature
1. 2.5V to 5.5V Operating Voltage
2. Pin-to-pin with TPS2553
3. 2-A ICONT_MAX
4. 0.275A to 2.7A Adjustable ILIMIT (±6.5% at 1.7A)
5. 70mΩ (typ) RON
6. 1.5µs short circuit response
7. 8 ms fault report deglitching
8. Reverse current blocking (when disabled)
9. Built-in soft start
10. UL 60950 and UL 62368 recognized
11. 15kV ESD protection per IEC 61000-4-2 (with external capacitor)
3. Application
1. USB port/hub, laptop, desktop
2. HDTV
3. Set-top box
4. Fiber receptacle protection
4. Pin configuration
5. Pin Description
6. Application Information
During normal operation, the TPS25221 load current is less than the current limit threshold and the device does not Limit current. During normal operation, the N-channel MOSFET is fully boosted and VOUT = VIN - (IOUT x rDS (on)). The voltage drop across the MOSFET is relatively small compared to VIN, while VOUT is approximately Equal to VIN. The TPS25221 limits the current to the programmed current-limit threshold set by RILIM, reducing the gate drive to Internal NFET, which increases Rds(on) and reduces load current. This enables the device to regulate efficiently current to the current limit threshold. Increasing the resistance of the MOSFET means a voltage drop The voltage across the device is no longer negligible (VIN ≠ VOUT) and VOUT decreases. VOUT is reduced by proportional to the magnitude of the overload condition. Under current limit, power dissipation in the package can raise the die temperature above thermal shutdown threshold (145°C typical) and the device shuts down until the die temperature cools Hysteresis of thermal shutdown circuit (20°C typical). The device then turns on and continues the thermal cycle until the overload condition is removed.
