TPW1R306PL,L1Q

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-DSOP Advance
• Mounting Type:Surface Mount
• Operating Temperature:175°C
• Power Dissipation (Max):960mW (Ta), 170W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:8100pF @ 30V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:91nC @ 10V

• Series:U-MOSIX-H
• Rds On (Max) @ Id, Vgs:1.29 mOhm @ 50A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:260A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)