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TRS6E65C,S1AQ

Toshiba Semiconductor and Storage
TRS6E65C,S1AQ HongDa Electronics TRS6E65C,S1AQ
  • Manufacturer Part# TRS6E65C,S1AQ
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionDIODE SCHOTTKY 650V 6A TO220-2L
  • More DetailDiode Silicon Carbide Schottky 650V 6A (DC) Throug...
In Stock: 1000

Can ship immediately

Datasheet:
TRS6E65C,S1AQ Datasheet

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Not For New Designs
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):650V
  • Current - Average Rectified (Io):6A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.7V @ 6A
  • Speed:No Recovery Time > 500mA (Io)

 

  • Reverse Recovery Time (trr):0ns
  • Current - Reverse Leakage @ Vr:90µA @ 650V
  • Capacitance @ Vr, F:35pF @ 650V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220-2L
  • Operating Temperature - Junction:175°C (Max)

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