TRS8E65C,S1Q

Technical Details

• Series:--
• Packaging:Tube 
• Part Status:Active
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):650V
• Current - Average Rectified (Io):8A (DC)
• Voltage - Forward (Vf) (Max) @ If:1.7V @ 8A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0ns
• Current - Reverse Leakage @ Vr:90µA @ 650V
• Capacitance @ Vr, F:44pF @ 650V, 1MHz
• Mounting Type:Through Hole
• Package / Case:TO-220-2
• Supplier Device Package:TO-220-2L
• Operating Temperature - Junction:175°C (Max)