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TSM70N1R4CH C5G

Taiwan Semiconductor Corporation
TSM70N1R4CH C5G HongDa Electronics TSM70N1R4CH C5G
  • Manufacturer Part# TSM70N1R4CH C5G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 700V 3.3A TO251
  • More DetailN-Channel 700V 3.3A (Tc) 38W (Tc) Through Hole TO-...
In Stock: 3750

Can ship immediately

Datasheet:
TSM70N1R4CH C5G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:TO-251 (IPAK)
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):38W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:370pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:1.4 Ohm @ 1.2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
  • Drain to Source Voltage (Vdss):700V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tube 

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