US6M2GTR Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V, 20V
• Current - Continuous Drain (Id) @ 25°C:1.5A, 1A
• Rds On (Max) @ Id, Vgs:240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 1mA, 2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.5V, 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:80pF @ 10V, 150pF @ 10V
• Power - Max:1W
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Package / Case:6-SMD, Flat Leads
• Supplier Device Package:TUMT6