VKM60-01P1

Technical Details

• Series:HiPerFET™
• Packaging:Bulk 
• Part Status:Not For New Designs
• FET Type:4 N-Channel (H-Bridge)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:75A
• Rds On (Max) @ Id, Vgs:25 mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id:4V @ 4mA

• Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 25V
• Power - Max:300W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:ECO-PAC2
• Supplier Device Package:ECO-PAC2