VP1008B

Technical Details

• Vgs(th) (Max) @ Id:4.5V @ 1mA
• Package / Case:TO-205AD, TO-39-3 Metal Can
• Supplier Device Package:TO-39
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):6.25W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:150pF @ 25V
• Vgs (Max):±20V
• Series:--

• Rds On (Max) @ Id, Vgs:5 Ohm @ 1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:790mA (Ta)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tube