VWM200-01P

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Obsolete
• FET Type:6 N-Channel (3-Phase Bridge)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:210A
• Rds On (Max) @ Id, Vgs:5.2 mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:4V @ 2mA

• Gate Charge (Qg) (Max) @ Vgs:430nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:--
• Power - Max:--
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Package / Case:V2-PAK
• Supplier Device Package:V2-PAK