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HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

Results: 325

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Mft.Part#
Specification
Price(USD)
JDH2S02SL,L3F

JDH2S02SL,L3F

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 10V
 Current - Average Rectified (Io): 10mA (DC)

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JDH2S02SL,L3F Datasheet

In Stock: 10000

RFQ
D3501N42TVFXPSA1

D3501N42TVFXPSA1

Infineon Technologies
 Part Status: Active
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 4200V
 Current - Average Rectified (Io): 4870A
 Speed: Standard Recovery >500ns, > 200mA (Io)

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D3501N42TVFXPSA1 Datasheet

In Stock: 1000

RFQ
BAS16HMFHT116

BAS16HMFHT116

ROHM Semiconductor
 Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 80V

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BAS16HMFHT116 Datasheet

In Stock: 18000

RFQ
BAS116HMFHT116

BAS116HMFHT116

ROHM Semiconductor
 Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 80V

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BAS116HMFHT116 Datasheet

In Stock: 1000

RFQ
D2700U45X122XOSA1

D2700U45X122XOSA1

Infineon Technologies
 Packaging: Tray
 Part Status: Active
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 4500V
 Current - Average Rectified (Io): 2900A

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D2700U45X122XOSA1 Datasheet

In Stock: 1000

RFQ

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