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'HIGH-SPEED PARALLEL CONVERTER IC'
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HIGH-SPEED PARALLEL CONVERTER IC
Results: 858,187
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Mft.Part#
Specification
Price(USD)
MT29F2G08ABAGAWP-ITE:G
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
1:
$0
MT29F2G08ABAGAWP-ITE:G Datasheet
In Stock:
1000
RFQ
MTA8ATF51264HZ-2G1B1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
1:
$0
MTA8ATF51264HZ-2G1B1 Datasheet
In Stock:
1000
RFQ
MT29F2G16ABAEAWP-AIT:E
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
1:
$0
MT29F2G16ABAEAWP-AIT:E Datasheet
In Stock:
1000
RFQ
MT29F1G16ABBDAM68A3WC1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
1:
$0
MT29F1G16ABBDAM68A3WC1 Datasheet
In Stock:
1000
RFQ
MT29F4G16ABADAM60A3WC1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
1:
$0
MT29F4G16ABADAM60A3WC1 Datasheet
In Stock:
1000
RFQ
MT29F128G08CBECBL95B3WC1-R
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
1:
$0
MT29F128G08CBECBL95B3WC1-R Datasheet
In Stock:
1000
RFQ
MTA8ATF1G64AZ-2G3A1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 64Gb (1G x 64)
1:
$0
MTA8ATF1G64AZ-2G3A1 Datasheet
In Stock:
1000
RFQ
MT29F1G16ABBEAH4-AITX:E
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
1:
$0
MT29F1G16ABBEAH4-AITX:E Datasheet
In Stock:
1000
RFQ
MT29F4G16ABAFAH4-AITES:F
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
1:
$0
MT29F4G16ABAFAH4-AITES:F Datasheet
In Stock:
1000
RFQ
MT29F64G08CBCGBWP-B:G
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
1:
$0
MT29F64G08CBCGBWP-B:G Datasheet
In Stock:
1000
RFQ
MTA8ATF51264HZ-2G6B1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
1:
$0
MTA8ATF51264HZ-2G6B1 Datasheet
In Stock:
1000
RFQ
MT29F64G08CBABBWPR:B
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
1:
$0
MT29F64G08CBABBWPR:B Datasheet
In Stock:
1000
RFQ
LE28F4001CTS12-MPB-E
ON Semiconductor
Packaging: Tray
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
1:
$0
LE28F4001CTS12-MPB-E Datasheet
In Stock:
1000
RFQ
MT29F32G08ABAAAM73A3WC1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
1:
$0
MT29F32G08ABAAAM73A3WC1 Datasheet
In Stock:
1000
RFQ
MT29F128G08AKEDBJ5-12:D
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
1:
$0
MT29F128G08AKEDBJ5-12:D Datasheet
In Stock:
1000
RFQ
MT29F64G08CBCGBWP-BES:G
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
1:
$0
MT29F64G08CBCGBWP-BES:G Datasheet
In Stock:
1000
RFQ
MTA8ATF1G64HZ-2G6E1
Micron Technology Inc.
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 64Gb (1G x 64)
1:
$0
MTA8ATF1G64HZ-2G6E1 Datasheet
In Stock:
1000
RFQ
MT29F4G08ABBDAHC-AIT:D
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
1:
$0
MT29F4G08ABBDAHC-AIT:D Datasheet
In Stock:
1000
RFQ
MT29F4G16ABADAWP-AIT:D
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
1:
$0
MT29F4G16ABADAWP-AIT:D Datasheet
In Stock:
1000
RFQ
MT29F128G08CFABAWP-IT:B
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
1:
$0
MT29F128G08CFABAWP-IT:B Datasheet
In Stock:
1000
RFQ
MT29F2G08ABAEAWP-ATX:E
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
1:
$0
MT29F2G08ABAEAWP-ATX:E Datasheet
In Stock:
1000
RFQ
MT29F64G08CBABAWP-M:B
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
1:
$0
MT29F64G08CBABAWP-M:B Datasheet
In Stock:
1000
RFQ
MT29F4G08ABAFAWP-AITES:F
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
1:
$0
MT29F4G08ABAFAWP-AITES:F Datasheet
In Stock:
1000
RFQ
MT29F128G08CBEBBL85C3WC1
Micron Technology Inc.
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
1:
$0
MT29F128G08CBEBBL85C3WC1 Datasheet
In Stock:
1000
RFQ
MT29F2G08ABAEAH4-AITX:E
Micron Technology Inc.
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
1:
$0
MT29F2G08ABAEAH4-AITX:E Datasheet
In Stock:
1000
RFQ
TLP2366(TPR,E
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2366(TPR,E Datasheet
In Stock:
1000
RFQ
TLP2366(V4-TPR,E
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2366(V4-TPR,E Datasheet
In Stock:
1000
RFQ
TLP2110(TP,F)
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 25kV/s
--
TLP2110(TP,F) Datasheet
In Stock:
1000
RFQ
TLP2261(LF4,E
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2261(LF4,E Datasheet
In Stock:
1000
RFQ
TLPN137(F)
Toshiba Semiconductor and Storage
Packaging: Tube
Part Status: Active
Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
--
TLPN137(F) Datasheet
In Stock:
200
RFQ
QT2601
QT Brightek (QTB)
Packaging: Tube
Part Status: Active
Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
--
QT2601 Datasheet
In Stock:
1000
RFQ
TLP2767(E
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 25kV/s
--
TLP2767(E Datasheet
In Stock:
1000
RFQ
TLP2105(TP,F)
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 10kV/s
--
TLP2105(TP,F) Datasheet
In Stock:
1000
RFQ
MLX91208LDC-CAV-000-TU
Melexis Technologies NV
Series: Triaxis
Packaging: Tube
Part Status: Active
For Measuring: AC/DC
Sensor Type: Hall Effect, Open Loop
--
MLX91208LDC-CAV-000-TU Datasheet
In Stock:
328
RFQ
MLX91208LDC-CAV-001-RE
Melexis Technologies NV
Series: Triaxis
Packaging: Tape & Reel (TR)
Part Status: Active
For Measuring: AC/DC
Sensor Type: Hall Effect, Open Loop
--
MLX91208LDC-CAV-001-RE Datasheet
In Stock:
1000
RFQ
TLP2761(TP,E)
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2761(TP,E) Datasheet
In Stock:
1000
RFQ
TLP2261(D4-LF4,E
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2261(D4-LF4,E Datasheet
In Stock:
1000
RFQ
TLP2261(TP4,E
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2261(TP4,E Datasheet
In Stock:
1000
RFQ
MLX91208LDC-CAV-000-RE
Melexis Technologies NV
Series: Triaxis
Packaging: Tape & Reel (TR)
Part Status: Active
For Measuring: AC/DC
Sensor Type: Hall Effect, Open Loop
--
MLX91208LDC-CAV-000-RE Datasheet
In Stock:
3000
RFQ
TLP2662(D4-TP1,F)
Toshiba Semiconductor and Storage
Part Status: Active
Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/s
--
TLP2662(D4-TP1,F) Datasheet
In Stock:
1000
RFQ
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