All products for Infineon Technologies

Results: 18,625

Photo
Mft.Part#
PDF
Specification
Price(USD)
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Voltage - Collector Emitter Breakdown (Max): 600V
 Current - Collector (Ic) (Max): 16A
 Current - Collector Pulsed (Icm): 18A

--

RFQ

 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: Single Chopper
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Power - Max: 1050W

--

RFQ

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Voltage - Collector Emitter Breakdown (Max): 600V
 Current - Collector (Ic) (Max): 65A
 Current - Collector Pulsed (Icm): 72A

--

RFQ

 Series: EconoPIM 2
 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: Three Phase Inverter
 Voltage - Collector Emitter Breakdown (Max): 1200V

--

RFQ

 Part Status: Last Time Buy

--

RFQ

 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: Three Phase Inverter
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 100A

--

RFQ

 Part Status: Not For New Designs
 Configuration: Single Switch
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 300A
 Power - Max: 1550W

--

RFQ

 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: Three Phase Inverter
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 135A

--

RFQ

 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: 2 Independent
 Voltage - Collector Emitter Breakdown (Max): 1700V
 Current - Collector (Ic) (Max): 340A

--

RFQ

 Series: EconoPIM3
 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: Three Phase Inverter
 Voltage - Collector Emitter Breakdown (Max): 1700V

--

RFQ

 Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N and P-Channel
 FET Feature: Standard

--

RFQ

 Part Status: Active
 Configuration: Three Phase Inverter
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 280A
 Power - Max: 1000W

--

RFQ

 Part Status: Active
 Configuration: 2 Independent
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 1200A
 Power - Max: 1200000W

--

RFQ

 Part Status: Active
 IGBT Type: Trench Field Stop
 Configuration: 2 Independent
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 1400A

--

RFQ

 Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N and P-Channel
 FET Feature: Logic Level Gate

--

RFQ

 Part Status: Obsolete
 Configuration: Half Bridge
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 285A
 Power - Max: 1250W

--

RFQ

 Part Status: Obsolete
 Configuration: Single
 Voltage - Collector Emitter Breakdown (Max): 1200V
 Current - Collector (Ic) (Max): 300A
 Power - Max: 910W

--

RFQ

 Part Status: Obsolete
 IGBT Type: NPT
 Configuration: Single
 Voltage - Collector Emitter Breakdown (Max): 600V
 Current - Collector (Ic) (Max): 40A

--

RFQ

 Series: OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: HEXFET
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 N-Channel (Dual)
 Frequency: 800MHz
 Gain: 24dB

--

RFQ

 Packaging: Tray
 Part Status: Obsolete
 Transistor Type: LDMOS
 Frequency: 800MHz
 Gain: 16dB

--

RFQ

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: LDMOS
 Frequency: 960MHz
 Gain: 18.5dB

--

RFQ

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: LDMOS
 Frequency: 1.96GHz
 Gain: 17.5dB

--

RFQ

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN
 Voltage - Collector Emitter Breakdown (Max): 3.7V
 Frequency - Transition: 60GHz

--

RFQ

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN
 Voltage - Collector Emitter Breakdown (Max): 4.7V
 Frequency - Transition: 42GHz

--

RFQ

 Series: *
 Part Status: Obsolete

--

RFQ

 Packaging: Strip
 Part Status: Obsolete
 Transistor Type: LDMOS
 Frequency: 2.17GHz
 Gain: 17.5dB

--

RFQ

 Series: *
 Part Status: Obsolete

--

RFQ

 Series: *
 Part Status: Obsolete

--

RFQ

 Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: Automotive, AEC-Q101, OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N and P-Channel Complementary
 FET Feature: Logic Level Gate, 4.5V Drive

--

RFQ

 Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: HEXFET, StrongIRFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: Automotive, AEC-Q101, OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: Automotive, AEC-Q101, OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: Automotive, AEC-Q101, OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: CoolMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

 Series: Automotive, AEC-Q101, OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

--

RFQ

Categories
Top