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TOSHIBA DUAL COMPARATOR IC

Results: 551,079

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TK100E06N1,S1X

TK100E06N1,S1X

Toshiba Semiconductor and Storage
 Series: U-MOSVIII-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK100E06N1,S1X Datasheet

In Stock: 119

RFQ
TLP5772(TP,E

TLP5772(TP,E

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Technology: Optical Coupling
 Number of Channels: 1
 Voltage - Isolation: 5000Vrms

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TLP5772(TP,E Datasheet

In Stock: 1500

RFQ
TLP5752(D4,E

TLP5752(D4,E

Toshiba Semiconductor and Storage
 Packaging: Tube
 Part Status: Active
 Technology: Optical Coupling
 Number of Channels: 1
 Voltage - Isolation: 5000Vrms

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TLP5752(D4,E Datasheet

In Stock: 97

RFQ
TLP183(GRH-TPL,E

TLP183(GRH-TPL,E

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 3750Vrms
 Current Transfer Ratio (Min): 150% @ 5mA

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TLP183(GRH-TPL,E Datasheet

In Stock: 1000

RFQ
TLP2303(TPR,E

TLP2303(TPR,E

Toshiba Semiconductor and Storage
 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 3750Vrms
 Current Transfer Ratio (Min): 500% @ 5mA
 Input Type: DC

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TLP2303(TPR,E Datasheet

In Stock: 1000

RFQ
TLP109(V4-TPL,E

TLP109(V4-TPL,E

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 3750Vrms
 Current Transfer Ratio (Min): 20% @ 16mA

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TLP109(V4-TPL,E Datasheet

In Stock: 1000

RFQ
TLP620-2(GBTP1,F,T)

TLP620-2(GBTP1,F,T)

Toshiba Semiconductor and Storage
 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Number of Channels: 2
 Voltage - Isolation: 5000Vrms
 Current Transfer Ratio (Min): 100% @ 5mA

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TLP620-2(GBTP1,F,T) Datasheet

In Stock: 1000

RFQ
TLP131(GB-TPR,F)

TLP131(GB-TPR,F)

Toshiba Semiconductor and Storage
 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Number of Channels: 1
 Voltage - Isolation: 3750Vrms
 Current Transfer Ratio (Min): 100% @ 5mA

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TLP131(GB-TPR,F) Datasheet

In Stock: 1000

RFQ
TK10A55D(STA4,Q,M)

TK10A55D(STA4,Q,M)

Toshiba Semiconductor and Storage
 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK10A55D(STA4,Q,M) Datasheet

In Stock: 1000

RFQ
TBAT54A,LM

TBAT54A,LM

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Configuration: 1 Pair Common Anode
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V

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TBAT54A,LM Datasheet

In Stock: 21000

RFQ
2SK2916(F)

2SK2916(F)

Toshiba Semiconductor and Storage
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V

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2SK2916(F) Datasheet

In Stock: 1000

RFQ
TPC8113(TE12L,Q)

TPC8113(TE12L,Q)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V

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TPC8113(TE12L,Q) Datasheet

In Stock: 1000

RFQ
TPCA8011-H(TE12LQM

TPCA8011-H(TE12LQM

Toshiba Semiconductor and Storage
 Series: U-MOSIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPCA8011-H(TE12LQM Datasheet

In Stock: 1000

RFQ
2SK1119(F)

2SK1119(F)

Toshiba Semiconductor and Storage
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 1000V

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2SK1119(F) Datasheet

In Stock: 1000

RFQ
2SK3313(Q)

2SK3313(Q)

Toshiba Semiconductor and Storage
 Packaging: Bulk
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V

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2SK3313(Q) Datasheet

In Stock: 1000

RFQ
2SK3868(Q,M)

2SK3868(Q,M)

Toshiba Semiconductor and Storage
 Packaging: Bulk
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V

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2SK3868(Q,M) Datasheet

In Stock: 1000

RFQ
TPCP8003-H(TE85L,F

TPCP8003-H(TE85L,F

Toshiba Semiconductor and Storage
 Series: U-MOSIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPCP8003-H(TE85L,F Datasheet

In Stock: 1000

RFQ
TK40P04M1(T6RSS-Q)

TK40P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage
 Series: U-MOSVI-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK40P04M1(T6RSS-Q) Datasheet

In Stock: 1000

RFQ
TK16A55D(STA4,Q,M)

TK16A55D(STA4,Q,M)

Toshiba Semiconductor and Storage
 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK16A55D(STA4,Q,M) Datasheet

In Stock: 1000

RFQ
TK4A65DA(STA4,Q,M)

TK4A65DA(STA4,Q,M)

Toshiba Semiconductor and Storage
 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK4A65DA(STA4,Q,M) Datasheet

In Stock: 1000

RFQ
TK50E10K3(S1SS-Q)

TK50E10K3(S1SS-Q)

Toshiba Semiconductor and Storage
 Packaging: Tube
 Part Status: Active
 Mounting Type: Through Hole
 Supplier Device Package: TO-220-3

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TK50E10K3(S1SS-Q) Datasheet

In Stock: 1000

RFQ
TPC6008-H(TE85L,FM

TPC6008-H(TE85L,FM

Toshiba Semiconductor and Storage
 Series: U-MOSVI-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPC6008-H(TE85L,FM Datasheet

In Stock: 1000

RFQ
TPCC8065-H,LQ(S

TPCC8065-H,LQ(S

Toshiba Semiconductor and Storage
 Series: U-MOSVII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPCC8065-H,LQ(S Datasheet

In Stock: 1000

RFQ
CBS05F30,L3F

CBS05F30,L3F

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 500mA

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CBS05F30,L3F Datasheet

In Stock: 20000

RFQ
CRZ10(TE85L,Q)

CRZ10(TE85L,Q)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Voltage - Zener (Nom) (Vz): 10V
 Tolerance: 10%
 Power - Max: 700mW

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CRZ10(TE85L,Q) Datasheet

In Stock: 1000

RFQ
1SS294,LF

1SS294,LF

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 40V
 Current - Average Rectified (Io): 100mA

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1SS294,LF Datasheet

In Stock: 1000

RFQ
CUS15I30A(TE85L,QM

CUS15I30A(TE85L,QM

Toshiba Semiconductor and Storage
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 1.5A
 Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A

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CUS15I30A(TE85L,QM Datasheet

In Stock: 1000

RFQ
CRS30I30A(TE85L,QM

CRS30I30A(TE85L,QM

Toshiba Semiconductor and Storage
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 3A
 Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A

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CRS30I30A(TE85L,QM Datasheet

In Stock: 1000

RFQ
CRS09(TE85L)

CRS09(TE85L)

Toshiba Semiconductor and Storage
 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 1.5A

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CRS09(TE85L) Datasheet

In Stock: 1000

RFQ
CLH01(TE16L,Q)

CLH01(TE16L,Q)

Toshiba Semiconductor and Storage
 Packaging: Bulk
 Part Status: Obsolete
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 200V
 Current - Average Rectified (Io): 3A (DC)

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CLH01(TE16L,Q) Datasheet

In Stock: 1000

RFQ
CLS02(TE16R,Q)

CLS02(TE16R,Q)

Toshiba Semiconductor and Storage
 Packaging: Bulk
 Part Status: Obsolete
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 40V
 Current - Average Rectified (Io): 10A (DC)

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CLS02(TE16R,Q) Datasheet

In Stock: 1000

RFQ
TPCA8009-H(TE12L,Q

TPCA8009-H(TE12L,Q

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 150V

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TPCA8009-H(TE12L,Q Datasheet

In Stock: 1000

RFQ
HN1D04FUTE85LF

HN1D04FUTE85LF

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Configuration: 2 Pair Series Connection
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 80V

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HN1D04FUTE85LF Datasheet

In Stock: 1000

RFQ
TLP3121(F)

TLP3121(F)

Toshiba Semiconductor and Storage
 Series: TLP3121
 Packaging: Bulk
 Part Status: Active
 Mounting Type: Surface Mount
 Circuit: SPST-NO (1 Form A)

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TLP3121(F) Datasheet

In Stock: 1000

RFQ
TBD62384AFWG,EHZ

TBD62384AFWG,EHZ

Toshiba Semiconductor and Storage
 Series: *
 Packaging: Tube
 Part Status: Active
 Package / Case: 18-SOIC (0.295", 7.50mm Width)
 Supplier Device Package: 18-SOP
  • 1: $0.8631
  • 10: $0.7648
  • 25: $0.691
  • 100: $0.6045
  • 250: $0.5305
  • 500: $0.4688
  • 1000: $0.3701
  • 3000: $0.3454
  • 5000: $0.329
TBD62384AFWG,EHZ Datasheet

In Stock: 2000

RFQ
TCD1205DG(8Z,W)

TCD1205DG(8Z,W)

Toshiba Semiconductor and Storage
 Part Status: Active
 Type: CCD
 Pixel Size: 14m x 200m
 Voltage - Supply: 4.5 V ~ 5.5 V
 Package / Case: 22-CDIP (0.400", 10.16mm)

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TCD1205DG(8Z,W) Datasheet

In Stock: 1000

RFQ
TLP3409S(TP,E

TLP3409S(TP,E

Toshiba Semiconductor and Storage
 Series: TLP3409S
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Mounting Type: Surface Mount
 Circuit: SPST-NO (1 Form A)

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TLP3409S(TP,E Datasheet

In Stock: 1000

RFQ
TLP222G-2(F)

TLP222G-2(F)

Toshiba Semiconductor and Storage
 Series: TLP222G-2
 Packaging: Tube
 Part Status: Active
 Mounting Type: Through Hole
 Circuit: SPST-NO (1 Form A) x 2

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TLP222G-2(F) Datasheet

In Stock: 392

RFQ
TLP3825F(F

TLP3825F(F

Toshiba Semiconductor and Storage
 Series: TLP3825F
 Packaging: Tube
 Part Status: Active
 Mounting Type: Through Hole
 Circuit: SPST-NO (1 Form A)

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TLP3825F(F Datasheet

In Stock: 83

RFQ
TLP240D(F

TLP240D(F

Toshiba Semiconductor and Storage
 Series: TLP240D
 Packaging: Tube
 Part Status: Active
 Mounting Type: Through Hole
 Circuit: SPST-NO (1 Form A)

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TLP240D(F Datasheet

In Stock: 1000

RFQ

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